| 1. | Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
砷化镓中载流子浓度等离子共振测量方法 |
| 2. | Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化镓外延层载流子浓度电容-电压测量方法 |
| 3. | In addition , the optimized carrier concentration in the membrane was determined . the bsa - fixed membranes were used to remove lipophilic toxins , bilirubin , from the simulation plasma
将所制备的促进传递膜应用于体外脱毒的模拟实验，该膜对亲脂性毒物胆红素具有较高的清除性能。 |
| 4. | The results indicate that with increasing the thickness of fes2 thin films , the electrical conductivity , the carrier concentration and the absorption coefficient decrease
结果表明，随着薄膜厚度的增加， fes2的电阻率升高，载流子浓度下降，在高吸收区fes2薄膜的光吸收系数也呈下降趋势。 |
| 5. | The experiments show : growth temperature is one of the key growth parameter by which the surface morphology , alloy composition , crystalline quality , mobility and carrier concentration are influenced
实验表明：生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。 |
| 6. | The influence of sulfidation pressure on microstructure is insignificant . the electrical resistivity is lower because the carrier concentration is very higher for the films annealed at lookpa sulfidation pressure
硫化压力的变化对薄膜的组织结构影响不明显，当硫化压力为100kpa时，薄膜具有较高的载流子浓度及较低的薄膜电阻率。 |
| 7. | And the factors affecting the permeation coefficient which include original carrier concentration , the original ph of feed solution and membrane types have also been discussed when the membrane phase contains membrane solvent and carrier
当膜相中含有载体时,考察了载体初始浓度、料液相初始ph值和膜类型等因素对渗透系数的影响。 |
| 8. | The measurements on composition distribution , carrier concentration and mobility revealed that most of its properties could not satisfy the requirements of ir detector at the as - grown state . further treatments are necessary
测试了晶体的光学及电学性能，根据测试结果，仅有部分生长态的晶片可以满足红外探测器的要求，还需对晶体进行后续处理以提高其性能。 |
| 9. | Electrochemistry c - v method was employed to measure the carrier concentration profile distribution of samples , discovered that the carrier concentration decreased with increasing of the diffusion depth , and the peak of concentration located at 0 . 25 m beneath the surface
利用电化学c - v法对样品的载流子浓度的纵向分布进行了研究，发现在距离样品表面0 . 25 m处载流子浓度达到最大。 |
| 10. | Here the conductance , carrier concentration and hall mobility ect parameters of er doped cdte films have been given . using seto model , we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
讨论了不同er离子注入量对硅基底上沉积的cdte薄膜结构和光电性能的影响,并具体给出了掺杂cdte多晶薄膜的电导、载流子浓度及迁移率等参数值。 |
